S9015 transistor (pnp) features power dissipation p cm : 0.45 w (tamb=25 ) collector current i cm: -0.1 a collector-base voltage v (br)cbo : -50 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -100 a, i e =0 -50 v collector-emitter breakdown voltage v (br)ceo ic= -1ma, i b =0 -45 v emitter-base breakdown voltage v (br)ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-50v, i e =0 -0.05 a emitter cut-off current i ebo v eb = -5v, i c =0 -0.05 a dc current gain h fe(1) v ce =-5v, i c = -1ma 60 1000 collector-emitter saturation voltage v ce (sat) i c =-100ma, i b = -10ma -0.3 v base-emitter saturation voltage v be (sat) i c =-100ma, i b =-10ma -1 v transition frequency f t v ce =-5v, i c = -10ma f= 30mhz 150 mhz classification of h fe(1) rank a b c d range 60-150 100-300 200-600 400-1000 S9015 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. 4.45 5.21 2.92 min 0. 41 0. 48 s eat ing p lane 0. 41 0. 53 4.32 5.33 1.25max 6. 35 m i n 12. 7 mi n 3.43 min 2.41 2.67 3.18 4.19 2.03 2.67 2.03 2.67 1.14 1.40 to-92 r o hs wej electronic co.,ltd
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